R. K. Willardson, Albert C. Beer's Compound Semiconductors Semiconductor Properties of PDF

By R. K. Willardson, Albert C. Beer

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Their results are shown in Fig. 7. Dependence of mobility lowering on Cr added to the melt for LPE GaAs. [From Shi Huiying ef al. ” It can be easily seen that the addition of Cr, up to a certain extent, will nullify the adverse effect of the “mobility killer,” probably due to the competition between Si and Cr for oxygen, resulting in a decrease of SiO, complex. ” It may be pointed out in passing that Sadana et al. (1982) have explained their data on Cr redistribution in ion-implanted and furnace-annealed GaAs in terms of Cr-0 complexing combined with segregation at dislocations.

1984) of BJU in collaboration with Cui Yucheng of GINM. As this peak appears only in Sn-doped InPs after being annealed at 5OO0C, and not in similarly annealed undoped and S-doped InPs, it is concluded that the center responsible for this peak should be a complex of Sn and VP. 55 pm InGaAsP/lnP DH lasers by Zuang Weihua et al. (1984a,b,c) of IS. 239 9 meV 8 9 9 "From Wu Lingxi ef a / . (1984). Reproduced with permission of the authors. I. 111-V COMPOUNDS 41 presence of this band is attributed to band-to-band radiative transition in the InP limiting layers.

Have studied the effect of light illumination on P 7 7 K in four undoped LPE n-GaAs samples. Their results are shown in Fig. 4 x -1 = - +1 P PL [ lo9 1 (T;o*)l’] ~ ~ A N -I 9 1 - + -, PI Psc where P S C represents space-charge scattering mobility and the other symbols have the usual meanings. 8. Relationship between ( A p / p ) 7 7 caused ~ by illumination and NscA for undoped LPE GaAs. [From Shi Huiying ef a/. (1984). ] It can be seen that a fairly good correlation exists between ( A ~ / ~ ) vand K Nsc A , in agreement with the anticipated effect of illumination, drastically shrinking the space-charge regions.

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